It’s all about efficiency. In any system, power has to be converted or managed. Whenever conversion happens losses occur. These losses manifest themselves as waste heat, which has to be dissipated and gives rise to excess greenhouse gases. Using gallium nitride, with its much lower on-resistance, superior fast-switching capabilities and zero reverse recovery losses a more efficient conversion can be achieved
• Higher reliability, no wire bonding – smaller form factor, more mechanically robust
• Very high current devices – combining our Island with our GaNPX packaging technology our devices can realize
• Ultra low thermal losses - heat sinks & fan can be eliminated or reduced to further reduce end-product
• High power density – Ideal for compact power-hungry devices
• Positive temperature coefficient, limiting current as temperature of device increases – Ideal for high-current
• No-charge storage, eliminating EMI spikes – Improving efficiency of SMPS
• High switching speed, >100V / nS, can be obtained which lower switching losses – Improving efficiency of SMPS
• E-Mode devices can control slew rate by simply controlling the gate resistance, enabling EMI and motor control
• On-board Drive Assist™ can eliminate drive inductance enabling GaN transistors to reach extremely high speeds
The island structure is the core GaN Systems IP. It has the dual advantage of a reduction in the size and cost of gallium nitride devices, while transferring substantial current from the on-chip metal to a separate carrier. GaN Systems' goal is the easy adoption of gallium nitride by designers and systems engineers.
GaNPX packaging for extreme speed and current